Transmetteurs photoniques sur silicium pour les transmissions optiques à grande capacité
|Advisor:||Shi, Wei; Rusch, Leslie|
|Abstract:||Data-hungry applications (social media, video streaming, big data, etc.) are expanding at a fast pace, growing demand for ultra-fast optical links. This driving force reveals need for low-cost, integrated optical transmitters and pushes research in silicon photonics because of its advantages over other platforms (i.e. LiNbO3 and InP), such as compatibility with CMOS fabrication processes, the ability of on-chip polarization manipulation, and cost effciency. Electro-optic modulators are an essential component of optical communication links and immense research is dedicated to developing effcient high-bitrate devices. However, the design of high-capacity Silicon Photonics (SiP) transmitters is challenging, mainly due to lack of inherent electro-optic effect in silicon. New design methodologies and performance merits have to be developed in order to map the system-level criteria of an optical link to the design parameters in device-level. In addition, co-design of silicon photonics and CMOS integrated circuits is crucial to reveal the full potential of silicon photonics. This thesis addresses the aforementioned challenges. In our frst contribution, for the frst time we present a DAC-less PAM-4 silicon photonic transmitter that includes a SiP lumped-element segmented-electrode Mach Zehnder modula-tor (LES-MZM) implemented in a generic silicon photonic process with lateral p-n junction and its co-designed CMOS driver. Using post processing, bitrates up to 38 Gb/s/channel are achieved without using an external digital to analog converter. We also presents a novel delay generation procedure in the CMOS driver. A robust delay as small as 7 ps is generated between the driving channels. In our second contribution, for the frst time we present a new figure of merit (FOM) for SiP modulators that includes not only the optical loss and effciency (like the prior FOMs), but also the SiP modulator electro-optic bandwidth ( BWEO). This new FOM can map SiP modulator physical design parameters to its system-level performance criteria, facilitating both device design and system optimization. For the frst time we define and employ the modulator power penalty (MPP) induced by the SiP modulator to study the system level performance degradation induced by SiP modulator in an optical pulse amplitude modulation link. We develope a closed-form equation for MPP that includes the SiP modulator limiting factors (optical loss, limited extinction ratio and electro-optic bandwidth limitation). Finally in our third contribution, we present a novel design methodology for integrated high capacity SiP modulators. The new approach is based on minimizing the power penalty of a SiP modulator (MPP) by optimizing modulator design and bias point. For the given process, a unit-length design of Mach Zehnder modulator (MZM) can be optimized following the process specifications and design rules. However, the length and the bias voltage of the phase shifter must be optimized together in a system context (e.g., baud rate and modulation format). Moreover, to verify the proposed optimization approach in experiment, we design an in-phase/quadrature-phase (IQ) silicon photonic modulator targeting 16-QAM modulation format at 60 Gbaud. Experimental results proves the reliability of our proposed methodology. We further push the baud rate up to 70 Gbaud to examine the capacity boundary of the device. Back to back data transmission with bitrates more than 233 Gb/s/channel are captured. This design methodology paves the way for designing the next generation of integrated dual- polarization 400+ Gb/s/channel transmitters.|
|Document Type:||Thèse de doctorat|
|Open Access Date:||27 September 2018|
|Collection:||Thèses et mémoires|
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