Phénomènes photo-induits dans les couches minces de chalcogénures à base d'arsenic dopées au cuivre
|Abstract:||The aim of this project is the study of the photo-induced phenomenon in arsenic-based chalcogenides thin film doped with copper. The arsenic based chalcogenide thin films were prepared by the co-evaporation method. Due to the fact that photo-induced effects in amorphous chalcogenides depend on the energy of the photons, we used an Argon laser to irradiate these thin films at an energy below (1.5 eV), near (2.4 and 2.5 eV), and above (5eV) of the band gap. Other controllable exposure variables such as power density and exposure time were also studied. This work was done in the laboratory of COPL (Center of Optics Photonics Laser) of the University Laval. It is well known that one of the photo-induced changes in As-based chalcogenide materials by exposure to near-bandgap light result in the red shift of the absorption edge i.e. photodarkening (PD). However since the observation of Liu  showing that the presence of 1% Cu in bulk As₂S₃, eliminates the PD, there remains a lack of detailed study concerning the influence of different experimental conditions on the structure, and optical properties of As-based glasses doped with copper. Accordingly, in the present work we have investigated the effect of copper on the photo-induced phenomena of chalcogenide glassy system Cux(As₂₀S₈₀)₁₀₀₋x. Photo-induced changes of the optical and structural properties of the films were studied after the films were exposed to different band-gap illuminations (5, 2.5, 2.4, 1.55 eV) and time exposure (0-90 min). The optical absorption edge measured for the Cu10-(As₂₀S₈₀)₉₀ thin films above and near the bandgap show that the red shift of the gap by above bandgap photon illumination is considerably higher (ΔEg=0.9 eV) than ΔEg induced by near bandgap illumination (ΔEg =0.14 eV). The morphology of the surface after exposure was examined using a scanning electron microscopy (SEM). The chemical compositions measured using energy dispersive spectroscopy (EDX) indicate an increase of the oxygen atoms into the exposed area. Raman spectra of the illuminated samples provide an evidence of the light-induced structural changes: a decrease in AsS₃/₂ pyramidal units and formation of Cu-S bond. The formation of copper arsenosulphide (Cu₃AsS₄) and As₂O₃ was also confirmed as the power density of exposure increases.|
|Document Type:||Mémoire de maîtrise|
|Open Access Date:||24 April 2018|
|Collection:||Thèses et mémoires|
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