Modulateur à réseau de Bragg intégré sur silicium pour les télécommunications dans les centres de données et leurs applications
|Abstract:||Recently, much effort has been invested to develop silicon modulators for optical telecommunications and their application areas. These modulators are useful for data centers and short-range high capacity links. Thus, this work focuses on the characterization of two types of integrated Bragg grating modulators on silicon waveguide and having an interleaved PN junction whose goal is to achieve a modulation of the Bragg wavelength through the application of an reverse bias voltage creating a carrier depleted region in the waveguide. For the first integrated Bragg grating modulator, the period of the PN junction is not matched to the Bragg grating period while the second integrated Bragg grating modulator has the PN junction matched to the Bragg grating period. This difference brings a different behaviour of the modulator thus resulting in a different quality of data that we seek to characterize. The advantage of this Bragg grating modulator is that it is relatively simple to design and has a uniform Bragg grating which has well known characteristics. The first step in the characterization of these modulators was making optical measurements, only to see the spectral response in reflection and transmission. Afterwards, we went through the usual approach, i.e by making DC measurements on the modulators. This thesis shows the practical results on the behaviour of the electrodes and the PN junction. And it also reports the results of the data transmission of these modulators by using an OOK modulation and PAM-4 modulation highlighting the differences in terms of modulation efficiency of these two modulators. We then discuss the relevance of this design choice compared to what we can currently find in the literature.|
|Document Type:||Mémoire de maîtrise|
|Open Access Date:||24 April 2018|
|Collection:||Thèses et mémoires|
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