Visualisation de la double ionisation du xénon

Authors: Gingras, Guillaume
Advisor: Witzel, Bernd
Abstract: We have studied the frequency dependence of single and double ionization of xenon in the multiphoton and tunneling regime by a short laser pulse of 100fs. (1fs.=1.10-15s). We have used a traveling-wave optical parametric amplifier of superfluorescence (TOPAS) pumped by an 800-nm, 100-fs Titane-Sapphire laser system and a time-of-flight spectrometer (TOF). We have measured the ionization yield of Xe+ and Xe2+ in the wavelength range between 500 and 2300nm for intensity between$10TW/cm2 and 1PW/cm2. These results allow us to visualize the non sequential part as well as the sequential part of the ionization process leading to Xe2+. Otherwise, we also have done calculations for the ionization rate of xenon using the PPT model (Perelomov et al. (1965)) which is known to be a good approximation for the ionization rate (which is frequency dependent) for the single ionization of noble gas. Using the fact that the Xe+ yield can be correctly predicted for the single ionization process, we have reconstructed the experimental events in such a way that it allows us to compare directly our measurements to the PPT prediction of a sequential scheme of ionization. Results show clearly the enhancement of the Xe2+ yield charge state (the so call "knee" structure on the ionization curve). The analysis of the non sequential in the wavelength regime show that a rescattering mechanism play an important role in non sequential double ionization. In this type of mechanism, one electron is first ejected by the laser field and come back to interact with a second electron (by redirecting itself toward his parent ion in the direction of the laser polarization) to share his energy and then product a non sequential ionization.
Document Type: Mémoire de maîtrise
Issue Date: 2008
Open Access Date: 13 April 2018
Grantor: Université Laval
Collection:Thèses et mémoires

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