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Personne :
Messaddeq, Younès

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Messaddeq

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Younès

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Université Laval. Département de physique, de génie physique et d'optique

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ncf11860592

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Résultats de recherche

Voici les éléments 1 - 7 sur 7
  • PublicationAccès libre
    Templated dewetting for self-assembled ultra low-loss chalcogenide integrated photonics
    (OSA Pub., 2021-10-11) Jean, Philippe; LaRochelle, Sophie; Shi, Wei; Messaddeq, Younès; Douaud, Alexandre
    Integrated photonics is of growing interest but relies on complex fabrication methods that have yet to match optical losses of bulkier platforms like optical fibers or whispering gallery mode resonators. Spontaneous matter reorganization phenomenon (e.g. dewetting) in thin-films provides a way for self-assembled structures with atomic scale surface rugosity, potentially alleviating the problems of roughness scattering loss and fabrication complexity. In this article, we study solid-state dewetting in chalcogenide glass thin-films and demonstrate its applicability to the fabrication of high-quality integrated photonics components. Optimal dewetting parameters are derived from a comprehensive experimental study of thin-film properties under high temperature rapid annealing. Atomic scale surface roughness are obtained using dewetting, with RMS values as low as Rq = 0.189 nm. Several integrated photonics components are fabricated using the method and characterized. We show that the use of pre-patterned templates leads to organized, reproducible patterns with large-scale uniformity and demonstrate the record high quality-factor of 4.7 × 106 in compact (R = 50 µm) microdisks, corresponding to 0.08 dB⋅cm−1 waveguide propagation loss. The integrated devices are directly fabricated on standard silicon-on-insulator dice using the micro-trench filling technique and coupled to silicon waveguides, making them readily deployable with existing silicon devices and systems.
  • PublicationAccès libre
    Atomic level structure of Ge-Sb-S glasses : chemical short range order and long Sb-S bonds
    (Elsevier Science, 2018-09-28) Pethes, Ildikó; Ari, Julien; Nazabal, Virginie; Messaddeq, Younès; Kaban, Ivan; Darpentigny, Jacques; Welter, Edmund; Gutowski, Olof; Bureau, Bruno; Jóvári, Pál
    The structure of Ge20Sb10S70, Ge23Sb12S65 and Ge26Sb13S61 glasses was investigated by neutron diffraction (ND), X-ray diffraction (XRD), extended X-ray absorption fine structure (EXAFS) measurements at the Ge and Sb K-edges as well as Raman scattering. For each composition, large scale structural models were obtained by fitting simultaneously diffraction and EXAFS data sets in the framework of the reverse Monte Carlo (RMC) simulation technique. Ge and S atoms have 4 and 2 nearest neighbors, respectively. The structure of these glasses can be described by the chemically ordered network model: Ge-S and Sb-S bonds are always preferred. These two bond types adequately describe the structure of the stoichiometric glass while S-S bonds can also be found in the S-rich composition. Raman scattering data show the presence of Ge-Ge, Ge-Sb and Sb-Sb bonds in the S-deficient glass but only Ge-Sb bonds are needed to fit diffraction and EXAFS datasets. A significant part of the Sb-S pairs has 0.3–0.4 Å longer bond distance than the usually accepted covalent bond length (∼2.45 Å). From this observation it was inferred that a part of Sb atoms have more than 3 S neighbors.
  • PublicationAccès libre
    Sulfur-rich chalcogenide claddings for athermal and high-Q silicon microring resonators
    (OSA Pub., 2021-02-26) Jean, Philippe; LaRochelle, Sophie; Thibault, Tristan; Shi, Wei; Messaddeq, Younès; Douaud, Alexandre
    Heterogeneous integration of materials with a negative thermo-optic coefficient is a simple and efficient way to compensate the strong detrimental thermal dependence of silicon-on-insulator devices. Yet, the list of materials that are both amenable for photonics fabrication and exhibit a negative TOC is very short and often requires sacrificing loss performance. In this work, we demonstrate that As20S80 chalcogenide glass thin-films can be used to compensate silicon thermal effects in microring resonators while retaining excellent loss figures. We present an experimental characterization of the glass thin-film and of fabricated hybrid microring resonators at telecommunication wavelengths. Nearly athermal operation is demonstrated for the TM polarization with an absolute minimum measured resonance shift of 5.25 pm K−1, corresponding to a waveguide effective index thermal dependence of 4.28×10-6 RIU/K. We show that the thermal dependence can be controlled by changing the cladding thickness and a negative thermal dependence is obtained for the TM polarization. All configurations exhibit unprecedented low loss figures with a maximum measured intrinsic quality factor exceeding 3.9 × 105, corresponding to waveguide propagation loss of 1.37 dB cm−1. A value of−4.75(75)×10-5 RIU/K is measured for the thermo-optic coefficient of As20S80 thin-films.
  • PublicationAccès libre
    Silicon subwavelength grating waveguides with high-index chalcogenide glass cladding
    (Optical Society of America, 2021-06-17) Jean, Philippe; LaRochelle, Sophie; Shi, Wei; Messaddeq, Younès; Douaud, Alexandre
    Silicon subwavelength grating waveguides enable flexible design in integrated photonics through nano-scale refractive index engineering. Here, we explore the possibility of combining silicon subwavelength gratings waveguides with a high-index chalcogenide glass as a top cladding, thus modifying the waveguiding behavior and opening a new design axis for these structures. A detailed investigation of the heterogeneous SWG waveguide with high-index cladding is presented based on analytical and numerical simulations. We design, fabricate and characterize silicon subwavelength grating waveguide microring resonators with an As20S80 cladding. Thanks to As20S80 negative thermo-optic coefficient, we achieve near athermal behavior with a measured minimum thermally induced resonance shift of −1.54 pm/K, highlighting the potential of subwavelength grating waveguides for modal confinement engineering and to control light-matter interaction. We also show that the chalcogenide glass can be thermally reflowed to remove air gaps inside the cladding, resulting in a highly conformal structure. These types of waveguides can find application in reconfigurable photonics, nonlinear optics, metamaterials or slow light.
  • PublicationAccès libre
    Etchless chalcogenide microresonators monolithically coupled to silicon photonic waveguides
    (Optical Society of America, 2020-05-13) Messaddeq, Sandra Helena; Genest, Jérôme; Jean, Philippe; LaRochelle, Sophie; Shi, Wei; Messaddeq, Younès; Douaud, Alexandre; Michaud-Belleau, Vincent
    Integration of chalcogenide waveguides in silicon photonics can mitigate the prohibitive nonlinear losses ofsilicon while leveraging the mature CMOS-compatiblenanophotonic fabrication process. In this work, wedemonstrate, for the first time, a method of integratinghigh-Q chalcogenides microring resonators onto the sil-icon photonics platform without post-process etching.The method uses micro-trench filling and a novel ther-mal dewetting technique to form low-loss chalcogenidestrip waveguides. The microrings are integrated di-rectly inside silicon photonic circuits through evanes-cent coupling, providing an uncomplicated hybrid in-tegration scheme without the need to modify the exist-ing photonics foundry process. The microrings showa high quality factor exceeding 6⇥105near 1550 nmand propagation losses below 0.7 dB/cm, indicatinga promising solution for low-cost, compact nonlinearphotonic devices with applications in various fieldssuch as telecommunications and spectroscopy.
  • PublicationAccès libre
    Multimodal structural characterization of Ge−S−I glasses by combination of DFT calculation and IR and polarized Raman Spectroscopy
    (American Chemical Society, 2019-01-14) Chazot, Matthieu; Méreau, Raphaël; El Amraoui, Mohammed; Messaddeq, Younès; Adamietz, Frédéric; Rodriguez, Vincent
    From a dual experimental–theoretical vibrational analysis, we propose a new rationalized structural description of Ge–S–I chalcogenides glasses at the nanoscale. A vibrational multipolar approach based on a simultaneous deconvolution of infrared (IR) and polarized Raman spectra (RS-VV and RS-HV) has been applied on these glasses. According to recent results on the amorphous GeS2 structure by X-Ray and neutron diffraction and to our spectral analyses, we suggest that the local structure of the glass backbone is effectively described by a combination of α-GeS2 nanolayers, edge-sharing GeS4 tetrahedra (ES-Td, ca ∼50%), and corner-sharing GeS4 tetrahedra (CS-Td, ca ∼50%). We have then compared the experimental spectra to the calculated IR and polarized Raman spectra of some selected GexSyIz structural units obtained by density functional theory calculation. The stretching modes of the Ge–S–I occurring in the high frequency spectral range (300–450 cm–1) are essentially those of the GeS2 glass backbone and have been revisited. In addition, through a careful analysis of the vibrational multipolar activities of stoichiometric and over-stoichiometric sulfur glasses between 180 and 280 cm–1, we propose new assignments for the seven modes that have been identified by our trimodal spectral analysis. We finally suggest that there is a competition between the insertion of atomic iodine as a glass modifier which involves the Ge–S–I clusters and molecular diiodine as a spectator encaged between two α-GeS2 nanolayers.
  • PublicationAccès libre
    Laser-induced dewetting of silver-doped chalcogenide glasses
    (Elsevier, 2018-03-19) Messaddeq, Sandra Helena; Messaddeq, Younès; Boily, Olivier; Douaud, Alexandre
    We report the observation of laser-induced dewetting responsible for the formation of periodic relief structures in silver-based chalcogenide thin-films. By varying the concentration of silver in the Agx(As20S80)100−x system (with x = 0, 4, 9 and 36), different surface relief structures are formed. The evolution of the surface changes as a function of laser parameters (power density, duration of exposure, and polarisation) as well as film thickness and silver concentration has been investigated. The scanning electron microscopy and atomic force microscopy images of irradiated spots show periodic ripples aligned perpendicularly to the electric field of incident light. Our results show that addition of silver into sulphur-rich chalcogenide thin-films improves the dewetting when compared to pure As20S80 thin-films. The changes in surface morphology were attributable to photo-induced chemical modifications and a laser-driven molecular rearrangement.