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Personne :
LaRochelle, Sophie

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LaRochelle

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Sophie

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Université Laval. Département de génie électrique et de génie informatique

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ncf10263799

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Résultats de recherche

Voici les éléments 1 - 8 sur 8
  • PublicationAccès libre
    Tunable slow-light in silicon photonics subwavelength grating waveguides
    (IEEE, 2019-12-09) Jean, Philippe; Gervais, Antoine; LaRochelle, Sophie; Shi, Wei
    Slow-light is experimentally demonstrated in subwavelength grating waveguides integrated on a silicon photonic chip. At the band-edge, a group index up to 30 is measured. We show that the band-edge wavelength varies linearly with the subwavelength grating period and can be shifted by thermal tuning.
  • PublicationAccès libre
    Silicon photonic modulator loaded by NPN junctions
    (Institute of electrical and electronics engineers, 2020-08-17) Jafari, Omid; LaRochelle, Sophie; Shi, Wei
    We experimentally demonstrate an asymmetric Bragg grating modulator with a phase shifter length of 240 μm, loaded by p-n junctions. The mode conversion by the asymmetric sidewall grating allows us to operate a Bragg modulator in reflection without a circulator. Simulation results show that there is room for improving the modulator efficiency and footprint by exploiting NPN junctions instead of p-n junctions.
  • PublicationAccès libre
    Analysis of inter-core cross-gain modulation in cladding pumped multi-core fiber amplifiers
    (IEEE Xplore, 2018-11-15) Essiambre, René-Jean.; Chen, Haoshuo; Matte-Breton, Charles; Fontaine, Nicolas K.; LaRochelle, Sophie; Ryf, Roland; Messaddeq, Younès
    We numerically investigate pump-induced gain variations in eight-core fi ber amplifi ers. We compare two fi bers with different erbium profi les by varying input power from -25 dBm to 0 dBm in one or four cores. Inter-core cross-gain modulation is < 0.6 dB.
  • PublicationAccès libre
    Silicon photonic modulator based on coupled Bragg grating resonators used as phase shifters
    (Optical Society of America, 2018-03-11) Jafari, Omid; Sepehrian, Hassan; LaRochelle, Sophie; Shi, Wei
    Bragg gratings with phase-shifts are inserted in a Mach-Zehnder modulator to enhance phase modulation, reduce device length and improve efficiency (Vπ×L=0.28 Vcm). Simulations show 3 nm optical bandwidth corresponding to 50 K operating temperature range.
  • PublicationAccès libre
    Silicon photonic modulator using mode conversion with asymmetric sidewall bragg gratings
    (IEEE, 2018-10-04) Jafari, Omid; LaRochelle, Sophie; Shi, Wei
    An asymmetric sidewall grating allows to operate a Bragg modulator in reflection without circulator and with less than 1.5 dB on-chip loss. An asymmetric Y-branch directs the incident TE0 mode to the grating, while the reflected TE1 mode is guided to the drop port.
  • PublicationAccès libre
    A model for electro-optic response of lumped slow-light silicon photonic modulators
    (IEEE, 2020-11-16) Jafari, Omid; LaRochelle, Sophie; Shi, Wei
    We model the electro-optic bandwidth of lumped slow-light modulators. In agreement with experiments, the model shows that modulators speed is determined by the RC constant and the interaction time in the slow light Brag structure.
  • PublicationRestreint
    Mode-conversion-based silicon photonic modulator using asymmetric Bragg grating and Y-branch
    (2019-09-22) Lin, Jiachuan; Jafari, Omid; LaRochelle, Sophie; Shi, Wei
    We experimentally demonstrate a Bragg-grating-based modulator operating in reflection with low loss and without a circulator by using mode conversion and an asymmetric Y-branch. With a compact footprint of 240μm, we demonstrate OOK up to 30 Gbit/s with an estimated switching energy of 150 fJ/bit.
  • PublicationAccès libre
    Silicon photonic modulator using coupled bragg grating resonators in a Mach-Zehnder structure
    (Optical Society of America, 2019) Jafari, Omid; LaRochelle, Sophie; Shi, Wei
    We demonstrate a silicon modulator enhanced by Bragg-grating resonators. The compact modulator (130- µm phase shifters) with Vπ×L= 0.25 V.cm has a 32-GHz EO bandwidth consuming only 80 fJ/bit at 10 Gbit/s