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Personne :
Jafari, Omid

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Jafari

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Omid

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Université Laval. Faculté des sciences et de génie

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ncf11921344

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Voici les éléments 1 - 3 sur 3
  • PublicationRestreint
    DAC-less PAM-4 slow-light silicon photonic modulator providing high efficiency and stability
    (Institute of Electrical and Electronics Engineers, 2021-05-25) Jafari, Omid; Zhalehpour, Sasan; LaRochelle, Sophie; Shi, Wei
    We report a slow-light silicon modulator that enables high-speed PAM operation without using an electrical digital-to-analogue converter (DAC). Bragg grating resonators, integrated into each arm of a Mach-Zehnder modulator, enhance the phase modulation through the slow light effect. The optical 4-level PAM signal is generated by driving directly the segmented phase shifter design with two binary signals. This modulator presents an ultra-compact footprint (LSL-MZM = 570 m), low energy consumption (73 fJ/bit), large electro-optic bandwidth (> 40 GHz). Up to 90 Gb/s is achieved over an nm-range spectral operation bandwidth (= 2 nm). Compared to other low-energy resonator-based modulators, such as micro-rings, this operating bandwidth confers higher stability with a potential operating temperature range of T = 50 C. We further examine the robustness of the proposed design to fabrication variations by measurements of spectral properties across the wafer. This modulator is of particular interest for applications, such as short-range data communications that require multiple compact and energy-efficient modulators on a single chip
  • PublicationRestreint
    Silicon photonic modulator loaded by a combination of lateral and interleaved p-n junctions
    (OSA, 2020-07-16) Jafari, Omid; Zhalehpour, Sasan; LaRochelle, Sophie; Shi, Wei
    We experimentally demonstrate a silicon photonic modulator loaded by lateral and interleaved p-n junctions simultaneously. Operated in reflection without a circulator, we demonstrate OOK up to 45Gbit/s with a short phase shifter length of 290µm.
  • PublicationAccès libre
    Mode-conversion-based silicon photonic modulator loaded by a combination of lateral and interleaved p-n junctions
    (Optical Society of America, 2021-03-19) Jafari, Omid; Zhalehpour, Sasan; LaRochelle, Sophie; Shi, Wei
    We experimentally demonstrate a silicon photonic modulator that can be loaded with a combination of lateral and interleaved p-n junctions to enhance its phase modulation. We use an asymmetric Bragg grating to introduce mode conversion in the active area, allowing the modulator to operate in reflection without introducing additional on-chip loss. With a compact footprint (phase shifter length of 290 μm), the modulator demonstrates a modulation speed up to 45 Gb/s with a bit error rate below the 7% forward-error-correction (FEC) threshold (up to 55 Gb/s with 20% FEC), and a low power consumption of 226 fJ/bit.